Indentation-induced low-temperature solid-phase crystallization of Si 1-xGex (x=0-1) on insulator

Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

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20 Citations (Scopus)

Abstract

Indentation-induced solid-phase crystallization (SPC) was proposed to achieve low-temperature growth of Si1-xGex (x=0-1) on insulator. Crystal nucleation was enhanced at the indented positions due to the stress effect, which triggered the lateral SPC. As a result, large Si 1-xGex (x=0-1) crystal regions (>2 μm) were achieved on insulator at low temperatures (<590 °C). The growth kinetics for this catalyst metal-free process, i.e., activation energies for nucleation and lateral growth, are presented as a function of the Ge fraction (x).

Original languageEnglish
Article number192106
JournalApplied Physics Letters
Volume94
Issue number19
DOIs
Publication statusPublished - Jun 18 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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