TY - GEN
T1 - Indirect compensation technique based two-stage recycling folded cascode amplifier for reconfigurable multi-mode sigma-delta ADC
AU - Fahmy, Ghazal A.
AU - Pokharel, R. K.
AU - Kanaya, H.
AU - Yoshida, K.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Typical and proposed recycling folded cascade (RFC) amplifier have been designed in TSMC 0.18μm. Simulated and measured results are compared. Proposed RFC demonstrate an enhancement on DC gain by 5dB almost for the same power consumption and bandwidth. Moreover, it realized less input referred noise than typical. Split-length devices (SLD) method is applied on proposed (RFC) to create a low impedance node employed in indirect feedback compensation. Realization of two-stages recycling folded cascade amplifier using indirect feedback compensation method has been designed. The proposed two-stages amplifier delivers open loop gain 83dB enhanced by 20dB over typical one, gain bandwidth product is lS7MHz and slew rate is 74 V/μs which is required for reconfigurable multi-mode sigma-delta ADC to attain high SNR and SNDR.
AB - Typical and proposed recycling folded cascade (RFC) amplifier have been designed in TSMC 0.18μm. Simulated and measured results are compared. Proposed RFC demonstrate an enhancement on DC gain by 5dB almost for the same power consumption and bandwidth. Moreover, it realized less input referred noise than typical. Split-length devices (SLD) method is applied on proposed (RFC) to create a low impedance node employed in indirect feedback compensation. Realization of two-stages recycling folded cascade amplifier using indirect feedback compensation method has been designed. The proposed two-stages amplifier delivers open loop gain 83dB enhanced by 20dB over typical one, gain bandwidth product is lS7MHz and slew rate is 74 V/μs which is required for reconfigurable multi-mode sigma-delta ADC to attain high SNR and SNDR.
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U2 - 10.1109/EDSSC.2010.5713690
DO - 10.1109/EDSSC.2010.5713690
M3 - Conference contribution
AN - SCOPUS:79952524417
SN - 9781424499977
T3 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
BT - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
T2 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Y2 - 15 December 2010 through 17 December 2010
ER -