Influence of back-diffusion of iron impurity on lifetime distribution near the seed-crystal interface in seed cast-grown monocrystalline silicon by numerical modeling

Bing Gao, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The distribution of minority carrier lifetime near the seed-crystal interface found in seed cast-grown monocrystalline silicon was clarified in this work. The distribution of lifetime first decreases and then increases from a seed to a crystal. Modeling of the temperature- and time-dependent iron diffusion and segregation during crystal growth showed a concentration distribution of an increase followed by a decrease from a seed to a crystal. The consistency between lifetime and iron distribution near the seed-crystal interface indicates that the back-diffusion of iron impurity from silicon melt into the seed at the duration stage before crystal growth is one of the main reasons for lifetime variation near the seed-crystal interface. Therefore, it is essential to reduce the duration time before crystal growth to obtain good-quality monocrystalline silicon.

Original languageEnglish
Pages (from-to)522-525
Number of pages4
JournalCrystal Growth and Design
Volume12
Issue number1
DOIs
Publication statusPublished - Jan 1 2012

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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