Influence of carrier lifetime control process in superjunction MOSFET characteristics

Wataru Saito, Syotaro Ono, Hiroaki Yamashita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary. 600 V-class SJ-MOSFETs were fabricated with a lifetime control process. In this paper, the influence of the carrier lifetime control process upon the on-resistance, leakage current and withstanding capability are reported. The lifetime control process modulates the static characteristics, and it is difficult to obtain the high speed operation with trr < 100 ns maintaining both low on-resistance and low leakage current. However, the withstanding capability is not problematic due to suppressing the carrier concentration by the short lifetime.

Original languageEnglish
Title of host publicationProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-90
Number of pages4
ISBN (Print)9781479929177
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: Jun 15 2014Jun 19 2014

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
CountryUnited States
CityWaikoloa, HI
Period6/15/146/19/14

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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