Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors

Szu Ying Chen, Chiu Yen Wang, Alexandra C. Ford, Jen Chun Chou, Yi Chung Wang, Feng Yun Wang, Johnny C. Ho, Hsiang Chen Wang, Ali Javey, Jon Yiew Gan, Lih Juann Chen, Yu Lun Chueh

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The influence of the catalyst materials on the electron transport behaviors of InAs nanowires (NWs) grown by a conventional vapor transport technique is investigated. Utilizing the NW field-effect transistor (FET) device structure, ∼20% and ∼80% of Au-catalyzed InAs NWs exhibit strong and weak gate dependence characteristics, respectively. In contrast, ∼98% of Ni-catalyzed InAs NWs demonstrate a uniform n-type behavior with strong gate dependence, resulting in an average OFF current of ∼10-10 A and a high I ON/IOFF ratio of >104. The non-uniform device performance of Au-catalyzed NWs is mainly attributed to the non-stoichiometric composition of the NWs grown from a different segregation behavior as compared to the Ni case, which is further supported by the in situ TEM studies. These distinct electrical characteristics associated with different catalysts were further investigated by the first principles calculation. Moreover, top-gated and large-scale parallel-array FETs were fabricated with Ni-catalyzed NWs by contact printing and channel metallization techniques, which yield excellent electrical performance. The results shed light on the direct correlation of the device performance with the catalyst choice.

Original languageEnglish
Pages (from-to)2654-2659
Number of pages6
JournalPhysical Chemistry Chemical Physics
Volume15
Issue number8
DOIs
Publication statusPublished - Feb 28 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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