Influence of D.C. electric field on growth of Arabidopsis thaliana (thale-cress)

T. Okumura, Y. Muramoto, N. Shimizu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper reports the influence of D.C. electric field on plant growth. In previous paper, we had reported that the D.C. electric field improves the growth of Raphanus sativus longipinnatus (daikon radish). We also reported that the D.C. electric field improves the seed germination rate of Arabidopsis thaliana (thale-cress). In this paper, the results for the thale-cress will be confirmed. Furthermore, we will show the new result that the D.C. electric field exerts no effect on seed germination when the electric potential of the sample is grounded by insertion of the grounded stainless steel plate into the seed bed.

Original languageEnglish
Title of host publication2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2010
DOIs
Publication statusPublished - Dec 1 2010
Externally publishedYes
Event2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2010 - West Lafayette, IN, United States
Duration: Oct 17 2010Oct 20 2010

Publication series

NameAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
ISSN (Print)0084-9162

Conference

Conference2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2010
CountryUnited States
CityWest Lafayette, IN
Period10/17/1010/20/10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Okumura, T., Muramoto, Y., & Shimizu, N. (2010). Influence of D.C. electric field on growth of Arabidopsis thaliana (thale-cress). In 2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2010 [5724001] (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP). https://doi.org/10.1109/CEIDP.2010.5724001