Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.

Original languageEnglish
Title of host publication2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Pages339-342
Number of pages4
Publication statusPublished - Sep 20 2010
Externally publishedYes
Event2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010 - Hiroshima, Japan
Duration: Jun 6 2010Jun 10 2010

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
CountryJapan
CityHiroshima
Period6/6/106/10/10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Noda, T., Fujimoto, H., ... Ohno, T. (2010). Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs. In 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010 (pp. 339-342). [5543871] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).