Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito; Tomohiro Nitta; Yorito Kakiuchi; Yasunobu Saito; Takao Noda; Hidetoshi Fujimoto; Akira Yoshioka; Tetsuya Ohno

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.

Original language	English
Title of host publication	2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Pages	339-342
Number of pages	4
Publication status	Published - Sept 20 2010
Externally published	Yes
Event	2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010 - Hiroshima, Japan Duration: Jun 6 2010 → Jun 10 2010

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Country/Territory	Japan
City	Hiroshima
Period	6/6/10 → 6/10/10

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Noda, T., Fujimoto, H., Yoshioka, A., & Ohno, T. (2010). Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs. In 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010 (pp. 339-342). [5543871] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs. / Saito, Wataru; Nitta, Tomohiro; Kakiuchi, Yorito et al.

2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010. 2010. p. 339-342 5543871 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, W, Nitta, T, Kakiuchi, Y, Saito, Y, Noda, T, Fujimoto, H, Yoshioka, A & Ohno, T 2010, Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs. in 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010., 5543871, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 339-342, 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010, Hiroshima, Japan, 6/6/10.

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abstract = "This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.",

author = "Wataru Saito and Tomohiro Nitta and Yorito Kakiuchi and Yasunobu Saito and Takao Noda and Hidetoshi Fujimoto and Akira Yoshioka and Tetsuya Ohno",

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AU - Saito, Wataru

AU - Nitta, Tomohiro

AU - Kakiuchi, Yorito

AU - Saito, Yasunobu

AU - Noda, Takao

AU - Fujimoto, Hidetoshi

AU - Yoshioka, Akira

AU - Ohno, Tetsuya

PY - 2010/9/20

Y1 - 2010/9/20

N2 - This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.

AB - This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.

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BT - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010

T2 - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010

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ER -

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Abstract

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All Science Journal Classification (ASJC) codes

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