Influence of ferromagnetic electrodes on the resistive switching device based on NiO

K. Okabe; M. Kawakita; S. Yakata; Takashi Kimura

doi:10.1109/INTMAG.2015.7157166

Influence of ferromagnetic electrodes on the resistive switching device based on NiO

K. Okabe, M. Kawakita, S. Yakata, Takashi Kimura

Condensed Matter Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide¹⁾, Gd oxide²⁾, and Co-doped Ti oxide³⁾, the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157166
Publication status	Published - Jul 14 2015
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: May 11 2015 → May 15 2015

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	5/11/15 → 5/15/15

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/INTMAG.2015.7157166

Cite this

Okabe, K., Kawakita, M., Yakata, S., & Kimura, T. (2015). Influence of ferromagnetic electrodes on the resistive switching device based on NiO. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157166] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157166

Influence of ferromagnetic electrodes on the resistive switching device based on NiO. / Okabe, K.; Kawakita, M.; Yakata, S. et al.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157166 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okabe, K, Kawakita, M, Yakata, S & Kimura, T 2015, Influence of ferromagnetic electrodes on the resistive switching device based on NiO. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157166, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7157166

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title = "Influence of ferromagnetic electrodes on the resistive switching device based on NiO",

abstract = "Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.",

author = "K. Okabe and M. Kawakita and S. Yakata and Takashi Kimura",

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doi = "10.1109/INTMAG.2015.7157166",

language = "English",

series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Influence of ferromagnetic electrodes on the resistive switching device based on NiO

AU - Okabe, K.

AU - Kawakita, M.

AU - Yakata, S.

AU - Kimura, Takashi

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

AB - Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Influence of ferromagnetic electrodes on the resistive switching device based on NiO

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