Influence of ferromagnetic electrodes on the resistive switching device based on NiO

K. Okabe, M. Kawakita, S. Yakata, Takashi Kimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - Jul 14 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period5/11/155/15/15

Fingerprint

Metal insulator transition
Electrodes
Oxides
Phase transitions
Electric fields

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Okabe, K., Kawakita, M., Yakata, S., & Kimura, T. (2015). Influence of ferromagnetic electrodes on the resistive switching device based on NiO. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157166] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157166

Influence of ferromagnetic electrodes on the resistive switching device based on NiO. / Okabe, K.; Kawakita, M.; Yakata, S.; Kimura, Takashi.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157166 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okabe, K, Kawakita, M, Yakata, S & Kimura, T 2015, Influence of ferromagnetic electrodes on the resistive switching device based on NiO. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157166, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7157166
Okabe K, Kawakita M, Yakata S, Kimura T. Influence of ferromagnetic electrodes on the resistive switching device based on NiO. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7157166. (2015 IEEE International Magnetics Conference, INTERMAG 2015). https://doi.org/10.1109/INTMAG.2015.7157166
Okabe, K. ; Kawakita, M. ; Yakata, S. ; Kimura, Takashi. / Influence of ferromagnetic electrodes on the resistive switching device based on NiO. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE International Magnetics Conference, INTERMAG 2015).
@inproceedings{2f8321068da047219bad0ae972bdec57,
title = "Influence of ferromagnetic electrodes on the resistive switching device based on NiO",
abstract = "Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.",
author = "K. Okabe and M. Kawakita and S. Yakata and Takashi Kimura",
year = "2015",
month = "7",
day = "14",
doi = "10.1109/INTMAG.2015.7157166",
language = "English",
series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
address = "United States",

}

TY - GEN

T1 - Influence of ferromagnetic electrodes on the resistive switching device based on NiO

AU - Okabe, K.

AU - Kawakita, M.

AU - Yakata, S.

AU - Kimura, Takashi

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

AB - Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

UR - http://www.scopus.com/inward/record.url?scp=84942474815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942474815&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7157166

DO - 10.1109/INTMAG.2015.7157166

M3 - Conference contribution

AN - SCOPUS:84942474815

T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -