Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

Jean Charles Maurice Ribierre, S. Ghosh, K. Takaishi, T. Muto, T. Aoyama

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm2 V-1 s-1. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO 2 treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.

Original languageEnglish
Article number205102
JournalJournal of Physics D: Applied Physics
Volume44
Issue number20
DOIs
Publication statusPublished - May 25 2011

Fingerprint

Organic field effect transistors
Gate dielectrics
Fluorocarbon Polymers
field effect transistors
Metals
Electrodes
Electrons
Chromium
Polymers
Polyimides
Gold
Hysteresis
Permittivity
Derivatives
Thin films
electrodes
polymers
polyimides
metals
chromium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors. / Ribierre, Jean Charles Maurice; Ghosh, S.; Takaishi, K.; Muto, T.; Aoyama, T.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 20, 205102, 25.05.2011.

Research output: Contribution to journalArticle

Ribierre, Jean Charles Maurice ; Ghosh, S. ; Takaishi, K. ; Muto, T. ; Aoyama, T. / Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 20.
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