Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

J. C. Ribierre, S. Ghosh, K. Takaishi, T. Muto, T. Aoyama

Research output: Contribution to journalArticle

11 Citations (Scopus)


Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm2 V-1 s-1. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO 2 treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.

Original languageEnglish
Article number205102
JournalJournal of Physics D: Applied Physics
Issue number20
Publication statusPublished - May 25 2011


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this