Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2

I. Tsunoda, T. Nagata, Taizoh Sadoh, A. Kenjo, M. Miyao

Research output: Contribution to journalArticle

Abstract

We have investigated the influence of Ar+ ion beam irradiation on the solid-phase crystallization (SPC) of amorphous Si on SiO2. The results indicated that the annealing temperature required to begin the SPC drastically decreased by the utilization of Ar+ irradiation, i.e., 400°C for the samples with irradiation and 700°C for the samples without irradiation. In addition, both (111) and (220) Si peaks were observed in the XRD spectra for the samples annealed with Ar+ irradiation. In this way, new method of SPC at low temperature has been established.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalSolid State Phenomena
Volume78-79
Publication statusPublished - 2001

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Tsunoda, I., Nagata, T., Sadoh, T., Kenjo, A., & Miyao, M. (2001). Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2 . Solid State Phenomena, 78-79, 345-348.