Abstract
Platinum hot films have been used as precise resistance thermometers to measure the thermal conductivities of carbon nanotubes and graphene. Assisted by focused ion beam (FIB) irradiation, the influence of defects on phonon transport have been examined. However, wide lateral ion beam scattering may affect the electrical properties of hot films and cause uncertainty. In this letter, the effect of FIB irradiation on the electrical resistivity of platinum hot films was evaluated. To investigate this effect qualitatively, electrical resistivity measurement and FIB irradiation were alternated while changing irradiation positions and doses. Irradiated ions were found to travel further than 25 μm away from the directly irradiated area, resulting in an increase of electrical resistivity of the film according to total accumulated dose. The number of scattered ions was found to depend on the irradiated surface. An empirical equation describing the relationship between electrical resistivity and assumed ion density in the hot films was proposed. The obtained results enable us to accurately estimate the thermal or electrical properties of nanomaterials using hot-film sensors combined with nanofabrication techniques using FIB.
| Original language | English |
|---|---|
| Pages (from-to) | 15-18 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 166 |
| DOIs | |
| Publication status | Published - Dec 1 2016 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering