Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE

Yoshihiro Kangawa, Norihito Kawaguchi, Yoshinao Kumagai, Akinori Koukitu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We carried out Nd:YAG pulse laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of InGaN at low temperatures in order to obtain films with high indium content. The results suggest that the reaction rate between group-III source gas and ammonia is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser may enhance the surface migration of the elements, and crystalline quality becomes good. These results imply that LMOVPE using Nd:YAG pulse laser is useful for the low-temperature growth of InGaN.

Original languageEnglish
Pages (from-to)444-448
Number of pages5
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - Dec 10 2004
Externally publishedYes

Fingerprint

Indium
Metallorganic vapor phase epitaxy
indium
Laser pulses
Crystalline materials
Lasers
pulses
lasers
vapor phase epitaxy
yttrium-aluminum garnet
Growth temperature
Laser beam effects
Ammonia
Reaction rates
Gases
ammonia
reaction kinetics
irradiation
Temperature
gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE. / Kangawa, Yoshihiro; Kawaguchi, Norihito; Kumagai, Yoshinao; Koukitu, Akinori.

In: Journal of Crystal Growth, Vol. 272, No. 1-4 SPEC. ISS., 10.12.2004, p. 444-448.

Research output: Contribution to journalArticle

Kangawa, Yoshihiro ; Kawaguchi, Norihito ; Kumagai, Yoshinao ; Koukitu, Akinori. / Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE. In: Journal of Crystal Growth. 2004 ; Vol. 272, No. 1-4 SPEC. ISS. pp. 444-448.
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