Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE

Yoshihiro Kangawa, T. Ito, Y. Kumagai, A. Koukitu

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.

Original languageEnglish
Pages (from-to)2575-2579
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - Dec 1 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

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Metallorganic vapor phase epitaxy
substrate
Substrates
Chemical analysis
Thermodynamic properties
thermodynamic property
Thermodynamics
vapor phase epitaxy
thermodynamic properties
thermodynamics
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE. / Kangawa, Yoshihiro; Ito, T.; Kumagai, Y.; Koukitu, A.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2575-2579.

Research output: Contribution to journalConference article

@article{dbac77ef15e346a595912a508408cd27,
title = "Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE",
abstract = "Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.",
author = "Yoshihiro Kangawa and T. Ito and Y. Kumagai and A. Koukitu",
year = "2003",
month = "12",
day = "1",
doi = "10.1002/pssc.200303538",
language = "English",
pages = "2575--2579",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7",

}

TY - JOUR

T1 - Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE

AU - Kangawa, Yoshihiro

AU - Ito, T.

AU - Kumagai, Y.

AU - Koukitu, A.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.

AB - Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.

UR - http://www.scopus.com/inward/record.url?scp=39749168523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39749168523&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303538

DO - 10.1002/pssc.200303538

M3 - Conference article

AN - SCOPUS:39749168523

SP - 2575

EP - 2579

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -