Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi

Research output: Contribution to journalLetter

8 Citations (Scopus)

Abstract

Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number2 A
DOIs
Publication statusPublished - Feb 1 2003
Externally publishedYes

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Molecular beam epitaxy
Partial pressure
Enthalpy
molecular beam epitaxy
Thermodynamics
Substrates
Chemical analysis
partial pressure
enthalpy
Temperature
thermodynamics
shift

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy. / Kangawa, Yoshihiro; Ito, Tomonori; Kumagai, Yoshinao; Koukitu, Akinori; Kawaguchi, Norihito.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 2 A, 01.02.2003.

Research output: Contribution to journalLetter

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abstract = "Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.",
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T1 - Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

AU - Kangawa, Yoshihiro

AU - Ito, Tomonori

AU - Kumagai, Yoshinao

AU - Koukitu, Akinori

AU - Kawaguchi, Norihito

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

AB - Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

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