Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi

Research output: Contribution to journalLetterpeer-review

8 Citations (Scopus)

Abstract

Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn0/(PIn0 + PGa0), where Pi0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

Original languageEnglish
Pages (from-to)L95-L98
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number2 A
DOIs
Publication statusPublished - Feb 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In<sub>x</sub>Ga<sub>1-x</sub>N film and input mole ratio during molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this