Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace

B. Gao, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The influence of silica crucible reaction with graphite susceptor on carbon and oxygen impurities in multicrystalline silicon was studied by global numerical simulations. Results showed that the crucible reaction has a marked effect on carbon and oxygen impurities in the crystal. When the activity of carbon on the surface of the graphite susceptor increases, both oxygen and carbon impurities in the melt increase rapidly. Therefore, the production of high-purity multicrystalline silicon requires setting a free space between the silica crucible and the graphite susceptor or depositing a layer of SiC film on the surface of susceptor to prevent reaction between them.

Original languageEnglish
Pages (from-to)239-245
Number of pages7
JournalJournal of Crystal Growth
Volume314
Issue number1
DOIs
Publication statusPublished - Jan 1 2011

Fingerprint

Graphite
Crucibles
Silicon
crucibles
Silicon Dioxide
solidification
furnaces
Solidification
Furnaces
Carbon
graphite
Silica
Impurities
silicon dioxide
impurities
carbon
silicon
Oxygen
oxygen
purity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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AB - The influence of silica crucible reaction with graphite susceptor on carbon and oxygen impurities in multicrystalline silicon was studied by global numerical simulations. Results showed that the crucible reaction has a marked effect on carbon and oxygen impurities in the crystal. When the activity of carbon on the surface of the graphite susceptor increases, both oxygen and carbon impurities in the melt increase rapidly. Therefore, the production of high-purity multicrystalline silicon requires setting a free space between the silica crucible and the graphite susceptor or depositing a layer of SiC film on the surface of susceptor to prevent reaction between them.

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