Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

Eiji Yoshikawa, Masahiro Tsugai, Makio Horikawa, Hiroshi Otani, Shigeru Hamada

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.

Original languageEnglish
Pages451-454
Number of pages4
Publication statusPublished - Jan 1 2002
Externally publishedYes
Event15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States
Duration: Jan 20 2002Jan 24 2002

Other

Other15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
CountryUnited States
CityLas Vegas, NV
Period1/20/021/24/02

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Yoshikawa, E., Tsugai, M., Horikawa, M., Otani, H., & Hamada, S. (2002). Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film. 451-454. Paper presented at 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.