Abstract
This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.
Original language | English |
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Pages | 451-454 |
Number of pages | 4 |
Publication status | Published - Jan 1 2002 |
Externally published | Yes |
Event | 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States Duration: Jan 20 2002 → Jan 24 2002 |
Other
Other | 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 |
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Country/Territory | United States |
City | Las Vegas, NV |
Period | 1/20/02 → 1/24/02 |
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering