Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

Eiji Yoshikawa; Masahiro Tsugai; Makio Horikawa; Hiroshi Otani; Shigeru Hamada

Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

Eiji Yoshikawa, Masahiro Tsugai, Makio Horikawa, Hiroshi Otani, Shigeru Hamada

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.

Original language	English
Pages	451-454
Number of pages	4
Publication status	Published - Jan 1 2002
Externally published	Yes
Event	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States Duration: Jan 20 2002 → Jan 24 2002

Other

Other	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
Country/Territory	United States
City	Las Vegas, NV
Period	1/20/02 → 1/24/02

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film. / Yoshikawa, Eiji; Tsugai, Masahiro; Horikawa, Makio; Otani, Hiroshi; Hamada, Shigeru.

2002. 451-454 Paper presented at 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.

Research output: Contribution to conference › Paper › peer-review

@conference{9bc81c919cee40b4a125ffe891d005a9,

title = "Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film",

abstract = "This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.",

author = "Eiji Yoshikawa and Masahiro Tsugai and Makio Horikawa and Hiroshi Otani and Shigeru Hamada",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "451--454",

note = "15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 ; Conference date: 20-01-2002 Through 24-01-2002",

}

TY - CONF

T1 - Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

AU - Yoshikawa, Eiji

AU - Tsugai, Masahiro

AU - Horikawa, Makio

AU - Otani, Hiroshi

AU - Hamada, Shigeru

PY - 2002/1/1

Y1 - 2002/1/1

N2 - This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.

AB - This paper reports the experimental results of examining the residual stress and stress gradient of LPCVD multilayered polysilicon film according to various rapid thermal annealing (RTA) in a nitrogen atmosphere. In particular the stress gradient of multilayered polysilicon film ranging from -17.1 to +1.5 MPa/μm as the RTA processing time increased could be reduced to nearly zero by selecting the appropriate RTA time. The mechanism responsible for this dependence was examined by using both experimental data and material analysis using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is concluded that the shift of the stress gradient is mainly caused by the thin nitride layers at surface and interface of multilayered polysilicon film.

UR - http://www.scopus.com/inward/record.url?scp=0036124072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036124072&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036124072

SP - 451

EP - 454

T2 - 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002

Y2 - 20 January 2002 through 24 January 2002

ER -

Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this