Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

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Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.

Original languageEnglish
Pages (from-to)3283-3287
Number of pages5
JournalThin Solid Films
Issue number8
Publication statusPublished - Feb 1 2012


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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