Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

Haigui Yang, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds