Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

Koji Ueda, Ryo Kizuka, Hisashi Takeuchi, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.

Original languageEnglish
Pages (from-to)8250-8253
Number of pages4
JournalThin Solid Films
Issue number22
Publication statusPublished - Aug 15 2007


All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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