TY - JOUR
T1 - Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si
AU - Ueda, Koji
AU - Kizuka, Ryo
AU - Takeuchi, Hisashi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
We are very grateful to Professor K. Matsuyama and Dr. Y. Nozaki of Kyushu University for VSM measurements and Mr. T. Enokida of Fukuryo Semicon Engineering for TEM observations and RBS measurements. Part of this work was supported by CREST of the Japan Science and Technology Corporation, and by the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2007/8/15
Y1 - 2007/8/15
N2 - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.
AB - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.
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U2 - 10.1016/j.tsf.2007.02.052
DO - 10.1016/j.tsf.2007.02.052
M3 - Article
AN - SCOPUS:34547818075
SN - 0040-6090
VL - 515
SP - 8250
EP - 8253
JO - Thin Solid Films
JF - Thin Solid Films
IS - 22
ER -