Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

Koji Ueda; Ryo Kizuka; Hisashi Takeuchi; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2007.02.052

Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

Koji Ueda, Ryo Kizuka, Hisashi Takeuchi, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

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Abstract

Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe₃Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe₃Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe₃Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χ_min of the Fe₃Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe₃Si/Si interfaces.

Original language	English
Pages (from-to)	8250-8253
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2007.02.052
Publication status	Published - Aug 15 2007

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

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10.1016/j.tsf.2007.02.052

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title = "Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si",

abstract = "Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.",

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T1 - Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

AU - Ueda, Koji

AU - Kizuka, Ryo

AU - Takeuchi, Hisashi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2007/8/15

Y1 - 2007/8/15

N2 - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.

AB - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.

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