Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

Koji Ueda; Ryo Kizuka; Hisashi Takeuchi; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2007.02.052

Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe₃Si on Si

Koji Ueda, Ryo Kizuka, Hisashi Takeuchi, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

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Abstract

Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe₃Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe₃Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe₃Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χ_min of the Fe₃Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe₃Si/Si interfaces.

Original language	English
Pages (from-to)	8250-8253
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2007.02.052
Publication status	Published - Aug 15 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.02.052

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title = "Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si",

abstract = "Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.",

author = "Koji Ueda and Ryo Kizuka and Hisashi Takeuchi and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: We are very grateful to Professor K. Matsuyama and Dr. Y. Nozaki of Kyushu University for VSM measurements and Mr. T. Enokida of Fukuryo Semicon Engineering for TEM observations and RBS measurements. Part of this work was supported by CREST of the Japan Science and Technology Corporation, and by the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2007",

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doi = "10.1016/j.tsf.2007.02.052",

language = "English",

volume = "515",

pages = "8250--8253",

journal = "Thin Solid Films",

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T1 - Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

AU - Ueda, Koji

AU - Kizuka, Ryo

AU - Takeuchi, Hisashi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: We are very grateful to Professor K. Matsuyama and Dr. Y. Nozaki of Kyushu University for VSM measurements and Mr. T. Enokida of Fukuryo Semicon Engineering for TEM observations and RBS measurements. Part of this work was supported by CREST of the Japan Science and Technology Corporation, and by the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2007/8/15

Y1 - 2007/8/15

N2 - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.

AB - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.

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U2 - 10.1016/j.tsf.2007.02.052

DO - 10.1016/j.tsf.2007.02.052

M3 - Article

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VL - 515

SP - 8250

EP - 8253

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 22

ER -

Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe₃Si on Si

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