TY - JOUR
T1 - Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si
AU - Ueda, Koji
AU - Kizuka, Ryo
AU - Takeuchi, Hisashi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2007/8/15
Y1 - 2007/8/15
N2 - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.
AB - Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.
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U2 - 10.1016/j.tsf.2007.02.052
DO - 10.1016/j.tsf.2007.02.052
M3 - Article
AN - SCOPUS:34547818075
VL - 515
SP - 8250
EP - 8253
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 22
ER -