Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato; Yuya Watanabe; Yasuyoshi Kurokawa; Akira Yamada; Yoshimi Ohta; Yusuke Niwa; masaki Hirota

doi:10.1557/opl.2012.1747

Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to conference › Paper › peer-review

Abstract

Al₂O₃ was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al ₂O₃ deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

Original language	English
Pages	33-38
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1747
Publication status	Published - Jan 1 2012
Externally published	Yes
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

Other

Other	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/25/12 → 11/30/12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2012.1747

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abstract = "Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.",

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AU - Kato, Shinya

AU - Watanabe, Yuya

AU - Kurokawa, Yasuyoshi

AU - Yamada, Akira

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2012/1/1

Y1 - 2012/1/1

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AB - Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

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Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

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