Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to conferencePaper

Abstract

Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

Original languageEnglish
Pages33-38
Number of pages6
DOIs
Publication statusPublished - Jan 1 2012
Externally publishedYes
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Other

Other2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/25/1211/30/12

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, S., Watanabe, Y., Kurokawa, Y., Yamada, A., Ohta, Y., Niwa, Y., & Hirota, M. (2012). Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 33-38. Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States. https://doi.org/10.1557/opl.2012.1747