Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to conferencePaper

Abstract

Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

Original languageEnglish
Pages33-38
Number of pages6
DOIs
Publication statusPublished - Jan 1 2012
Externally publishedYes
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Other

Other2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/25/1211/30/12

Fingerprint

Silicon
Passivation
passivity
Nanowires
Solar cells
nanowires
solar cells
preparation
Atomic layer deposition
silicon
atomic layer epitaxy
Carrier lifetime
Open circuit voltage
carrier lifetime
minority carriers
high aspect ratio
open circuit voltage
Aspect ratio
simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, S., Watanabe, Y., Kurokawa, Y., Yamada, A., Ohta, Y., Niwa, Y., & Hirota, M. (2012). Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 33-38. Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States. https://doi.org/10.1557/opl.2012.1747

Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. / Kato, Shinya; Watanabe, Yuya; Kurokawa, Yasuyoshi; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

2012. 33-38 Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States.

Research output: Contribution to conferencePaper

Kato, S, Watanabe, Y, Kurokawa, Y, Yamada, A, Ohta, Y, Niwa, Y & Hirota, M 2012, 'Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film' Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States, 11/25/12 - 11/30/12, pp. 33-38. https://doi.org/10.1557/opl.2012.1747
Kato S, Watanabe Y, Kurokawa Y, Yamada A, Ohta Y, Niwa Y et al. Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 2012. Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States. https://doi.org/10.1557/opl.2012.1747
Kato, Shinya ; Watanabe, Yuya ; Kurokawa, Yasuyoshi ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. Paper presented at 2012 MRS Fall Meeting, Boston, MA, United States.6 p.
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