Influence of the grain orientation on the charge transport properties of organic field-effect transistors

J. C. Ribierre, Y. Yokota, M. Sato, A. Ishizuka, T. Tanaka, S. Watanabe, M. Matsumoto, A. Muranaka, S. Matsumoto, M. Uchiyama, T. Aoyama

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report the effects of crystalline grain orientation on the charge transport properties of a J-aggregate bisazomethine dye (DE2) in thin films. Highly oriented DE2 organic field-effect transistors are fabricated using an insulating alignment layer of poly(tetrafluoroethylene) in the gate dielectric. An enhancement of about one and two orders of magnitude in hole mobility is achieved when the molecules and the crystalline grains are aligned perpendicular and parallel to the transistor channel, respectively. Ambipolar transport is observed only for the parallel alignment. To gain additional insights into the role of molecular packing on the charge transport properties of DE2, quantum chemical calculations are carried out to determine and compare the energetic splittings of the highest occupied molecular orbitals (HOMO) and of the lowest unoccupied molecular orbitals (LUMO) in the film. The results provide evidence that DE2 is intrinsically an ambipolar organic semiconductor and demonstrates the important role played by grain boundary orientation on charge trapping processes. Overall, the demonstration of field-effect mobilities as high as 0.01 cm2 V-1 s-1 and the observation of ambipolar transport in our devices represent an obvious milestone for the possible use of J-aggregate thin films in organic electronic devices. In addition, this work provides significant insights into the interplay between crystalline grain orientation and ambipolar charge transport properties in organic thin films.

Original languageEnglish
Pages (from-to)36729-36737
Number of pages9
JournalRSC Advances
Volume4
Issue number69
DOIs
Publication statusPublished - Jan 1 2014

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Organic field effect transistors
Crystal orientation
Transport properties
Charge transfer
Molecular orbitals
Crystalline materials
Thin films
Charge trapping
Hole mobility
Semiconducting organic compounds
Gate dielectrics
Polytetrafluoroethylenes
Transistors
Grain boundaries
Demonstrations
Dyes
Molecules

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Ribierre, J. C., Yokota, Y., Sato, M., Ishizuka, A., Tanaka, T., Watanabe, S., ... Aoyama, T. (2014). Influence of the grain orientation on the charge transport properties of organic field-effect transistors. RSC Advances, 4(69), 36729-36737. https://doi.org/10.1039/c4ra04964k

Influence of the grain orientation on the charge transport properties of organic field-effect transistors. / Ribierre, J. C.; Yokota, Y.; Sato, M.; Ishizuka, A.; Tanaka, T.; Watanabe, S.; Matsumoto, M.; Muranaka, A.; Matsumoto, S.; Uchiyama, M.; Aoyama, T.

In: RSC Advances, Vol. 4, No. 69, 01.01.2014, p. 36729-36737.

Research output: Contribution to journalArticle

Ribierre, JC, Yokota, Y, Sato, M, Ishizuka, A, Tanaka, T, Watanabe, S, Matsumoto, M, Muranaka, A, Matsumoto, S, Uchiyama, M & Aoyama, T 2014, 'Influence of the grain orientation on the charge transport properties of organic field-effect transistors', RSC Advances, vol. 4, no. 69, pp. 36729-36737. https://doi.org/10.1039/c4ra04964k
Ribierre JC, Yokota Y, Sato M, Ishizuka A, Tanaka T, Watanabe S et al. Influence of the grain orientation on the charge transport properties of organic field-effect transistors. RSC Advances. 2014 Jan 1;4(69):36729-36737. https://doi.org/10.1039/c4ra04964k
Ribierre, J. C. ; Yokota, Y. ; Sato, M. ; Ishizuka, A. ; Tanaka, T. ; Watanabe, S. ; Matsumoto, M. ; Muranaka, A. ; Matsumoto, S. ; Uchiyama, M. ; Aoyama, T. / Influence of the grain orientation on the charge transport properties of organic field-effect transistors. In: RSC Advances. 2014 ; Vol. 4, No. 69. pp. 36729-36737.
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