Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Haigui Yang, Dong Wang, Hiroshi Nakashima, Hongye Gao, Kana Hirayama, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima

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Abstract

Bottom-channel hole mobility was examined by a pseudo-metal-oxide- semiconductor field-effect transistors method for ultrathin SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI), which were fabricated using Ge condensation by dry oxidation. By comparing samples with and without a top SiO2 layer, we investigated the influence of top surface passivation on bottom-channel hole mobility. Mobility degradation was found in an ultrathin SGOI/GOI layer without top SiO2 and became more serious with a decrease in the thickness of the SGOI/GOI layer, which strongly suggested that top surface passivation is necessary to evaluate accurate channel mobility. A 13-nm-thick GOI with passivation showed a high mobility value of 440 cm2 /V s.

Original languageEnglish
Article number072104
JournalApplied Physics Letters
Volume93
Issue number7
DOIs
Publication statusPublished - Sep 1 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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