TY - JOUR
T1 - Influence of wafer edge profile on STI-CMP process performance (examination based on surface pressure of wafer calculated by FEM analysis)
AU - Fukuda, Akira
AU - Fukuda, Tetsuo
AU - Hiyama, Hirokuni
AU - Tsujimura, Manabu
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2010/6
Y1 - 2010/6
N2 - Influence of wafer edge profile on performance of Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP) process for semiconductor manufacturing was investigated. Finite Element Method was used to calculate the contact pressure on the wafer surface, and the removal rate was estimated based on the calculated contact pressure. As a result, shortening the edge width was confirmed to achieve flatter distribution of the contact pressure near the wafer edge. And wafer edge profile controlling is proposed as an effective approach to satisfy the requirement of the edge exclusion. Suitable Roll-Off Amount (ROA) and edge width are also forecasted for STI-CMP process in the next generation semiconductor manufacturing. To meet the specification for the generation of hp=35 nm with 1.5 mm edge exclusion, the edge width would be below 300 μm and ROA would be bellow 100 nm.
AB - Influence of wafer edge profile on performance of Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP) process for semiconductor manufacturing was investigated. Finite Element Method was used to calculate the contact pressure on the wafer surface, and the removal rate was estimated based on the calculated contact pressure. As a result, shortening the edge width was confirmed to achieve flatter distribution of the contact pressure near the wafer edge. And wafer edge profile controlling is proposed as an effective approach to satisfy the requirement of the edge exclusion. Suitable Roll-Off Amount (ROA) and edge width are also forecasted for STI-CMP process in the next generation semiconductor manufacturing. To meet the specification for the generation of hp=35 nm with 1.5 mm edge exclusion, the edge width would be below 300 μm and ROA would be bellow 100 nm.
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U2 - 10.1299/kikaic.76.1610
DO - 10.1299/kikaic.76.1610
M3 - Article
AN - SCOPUS:77956327681
SN - 0387-5024
VL - 76
SP - 1610
EP - 1616
JO - Nippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C
JF - Nippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C
IS - 766
ER -