Influence of ZnO buffer layer on ZnO nanowire growth by nanoparticle-assisted pulsed laser deposition

D. Nakamura, T. Shimogaki, K. Okazaki, I. A. Palani, K. Kubo, K. Tsuta, M. Higashihata, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have succeeded in growing various ZnO nanocrystals, such as nanowires, nanorods, and nanowalls, by a nanoparticle-assisted pulsed-laser deposition (NAPLD). In this study, low-density ZnO nanowires were synthesized by introduction of a ZnO buffer layer. Low-density hexagonal cone-shape ZnO cores are formed on the buffer layer, and vertically-aligned ZnO nanowires are grown on the cores. The density of the nanowires was clearly decreased with increasing the thickness of the Buffer layer. The buffer layer can be used as one of the effective additives to control the growth density of the ZnO nano-crystals synthesized by NAPLD.

Original languageEnglish
Title of host publicationSynthesis and Photonics of Nanoscale Materials IX
DOIs
Publication statusPublished - Mar 26 2012
EventSynthesis and Photonics of Nanoscale Materials IX - San Francisco, CA, United States
Duration: Jan 23 2012Jan 24 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8245
ISSN (Print)0277-786X

Other

OtherSynthesis and Photonics of Nanoscale Materials IX
CountryUnited States
CitySan Francisco, CA
Period1/23/121/24/12

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Nakamura, D., Shimogaki, T., Okazaki, K., Palani, I. A., Kubo, K., Tsuta, K., ... Okada, T. (2012). Influence of ZnO buffer layer on ZnO nanowire growth by nanoparticle-assisted pulsed laser deposition. In Synthesis and Photonics of Nanoscale Materials IX [82450N] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8245). https://doi.org/10.1117/12.907514