Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi 2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering

Kyohei Yamashita, Nathaporn Promros, Ryuhei Iwasaki, Shota Izumi, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)


    Hydrogen passivation was applied to the initial epitaxial growth of n-type β-FeSi 2 thin films on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) in order to reduced the formation of interface states and terminate dangling bonds in the β-FeSi 2 films, and the passivation effects were studied on basis of the electrical evaluation results of the formed n-type β-FeSi 2/p-type Si heterojunction photodiodes. The initial growth was made at different gas in-flow H 2/Ar ratios ranging from 0 to 0.2. The photodetection performance of the photodiode fabricated at the ratio of 0.2 was markedly improved as compared to those of the other samples. The quantum efficiency and detectivity were 2.08 % and 1.75 × 10 10 cm√Hz/W, respectively. The sample exhibited the minimum junction capacitance density of 9.2 nF/cm 2. The enhanced photo-detective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

    Original languageEnglish
    Title of host publicationCompound Semiconductors for Generating, Emitting and Manipulating Energy
    Number of pages6
    Publication statusPublished - 2012
    Event2011 MRS Fall Meeting - Boston, MA, United States
    Duration: Nov 28 2011Dec 2 2011

    Publication series

    NameMaterials Research Society Symposium Proceedings
    ISSN (Print)0272-9172


    Other2011 MRS Fall Meeting
    Country/TerritoryUnited States
    CityBoston, MA

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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