We investigated influences of a repetition frequency of laser pulses on growth of AlN crystalline films by pulsed laser deposition. The structural and morphological properties of the films were studied by X-ray diffraction and scanning electron microscopy. Employment of high frequency laser pulses not only enhanced the growth of AlN crystallites, but also afforded the crystal growth at higher nitrogen pressures. Growth of α-AlN was dramatically enhanced with an increase in the laser pulse frequency, while β-AlN was grown at the high frequency of laser pulses and high nitrogen pressures.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering