Influences of repetition rate of laser pulses on growth of crystalline AlN films on sapphire(0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, You Nakagawa, Satoshi Mohri, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    We investigated influences of a repetition frequency of laser pulses on growth of AlN crystalline films by pulsed laser deposition. The structural and morphological properties of the films were studied by X-ray diffraction and scanning electron microscopy. Employment of high frequency laser pulses not only enhanced the growth of AlN crystallites, but also afforded the crystal growth at higher nitrogen pressures. Growth of α-AlN was dramatically enhanced with an increase in the laser pulse frequency, while β-AlN was grown at the high frequency of laser pulses and high nitrogen pressures.

    Original languageEnglish
    Pages (from-to)618-620
    Number of pages3
    JournalDiamond and Related Materials
    Volume19
    Issue number5-6
    DOIs
    Publication statusPublished - May 1 2010

      Fingerprint

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Chemistry(all)
    • Mechanical Engineering
    • Physics and Astronomy(all)
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this