Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy

Xu Qiang Shen, Tanaka Satoru, Sohachi Iwai, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) and solid Ga as V and III sources. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, namely (1 × 1) and (2 × 2), were observed during the GaN growth depending on the growth conditions, which correspond to nitrogen-rich and Ga-rich surfaces, respectively. Phase diagram of the two surface states via growth conditions was also obtained, indicating the surface V/III ratio change during the growth. It was found that the GaN film quality was greatly improved under nitrogen-rich growth conditions by X-ray diffraction (XRD) and photoluminescence (PL) characterizations.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number6 A
Publication statusPublished - Jun 1 1998
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
Reflection high energy electron diffraction
Surface states
high energy electrons
Diffraction patterns
Phase diagrams
ammonia
Ammonia
Photoluminescence
diffraction patterns
electron diffraction
phase diagrams
photoluminescence
X ray diffraction
Substrates
diffraction

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy. / Shen, Xu Qiang; Satoru, Tanaka; Iwai, Sohachi; Aoyagi, Yoshinobu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 6 A, 01.06.1998.

Research output: Contribution to journalArticle

@article{8c79485304154893a6067995bcc2fa46,
title = "Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy",
abstract = "GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) and solid Ga as V and III sources. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, namely (1 × 1) and (2 × 2), were observed during the GaN growth depending on the growth conditions, which correspond to nitrogen-rich and Ga-rich surfaces, respectively. Phase diagram of the two surface states via growth conditions was also obtained, indicating the surface V/III ratio change during the growth. It was found that the GaN film quality was greatly improved under nitrogen-rich growth conditions by X-ray diffraction (XRD) and photoluminescence (PL) characterizations.",
author = "Shen, {Xu Qiang} and Tanaka Satoru and Sohachi Iwai and Yoshinobu Aoyagi",
year = "1998",
month = "6",
day = "1",
language = "English",
volume = "37",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "6 A",

}

TY - JOUR

T1 - Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy

AU - Shen, Xu Qiang

AU - Satoru, Tanaka

AU - Iwai, Sohachi

AU - Aoyagi, Yoshinobu

PY - 1998/6/1

Y1 - 1998/6/1

N2 - GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) and solid Ga as V and III sources. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, namely (1 × 1) and (2 × 2), were observed during the GaN growth depending on the growth conditions, which correspond to nitrogen-rich and Ga-rich surfaces, respectively. Phase diagram of the two surface states via growth conditions was also obtained, indicating the surface V/III ratio change during the growth. It was found that the GaN film quality was greatly improved under nitrogen-rich growth conditions by X-ray diffraction (XRD) and photoluminescence (PL) characterizations.

AB - GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) and solid Ga as V and III sources. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, namely (1 × 1) and (2 × 2), were observed during the GaN growth depending on the growth conditions, which correspond to nitrogen-rich and Ga-rich surfaces, respectively. Phase diagram of the two surface states via growth conditions was also obtained, indicating the surface V/III ratio change during the growth. It was found that the GaN film quality was greatly improved under nitrogen-rich growth conditions by X-ray diffraction (XRD) and photoluminescence (PL) characterizations.

UR - http://www.scopus.com/inward/record.url?scp=0032089514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032089514&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032089514

VL - 37

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -