InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

H. Hirayama, S. Tanaka, P. Ramvall, Y. Aoyagi

Research output: Contribution to journalConference article

Abstract

We demonstrate photoluminescence from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal-organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step-flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be approximately 10 nm and approximately 5 nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x = approximately 0.22 to approximately 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature-dependent energy shift of the photoluminescence peak-energy shows a localization behavior.

Original languageEnglish
Pages (from-to)737-742
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this