Initial stage of GaN nucleation on √3 × √3 R 30°-Ga reconstructed 4H-SiC(0 0 0 1)Si by molecular-beam epitaxy

K. Jeganathan, M. Shimuzu, H. Okumura, F. Hirose, Shinichi Nishizawa

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Abstract

Gallium nitride (GaN) initial nucleation kinetics by the influence of SiC(0 0 0 1)Si surface structure has been investigated. The Ga induced √3×√3R30° and 3×3 surface reconstructions are found to be more efficacious for GaN growth. During the initial stage of GaN/4H-SiC(0 0 0 1)Si growth by molecular-beam epitaxy, coherent polygon islands grow wide (∼40 nm) along the lateral directions. These coherent islands develop 2D growth through early coalescence as evidenced by the in situ reflection high-energy electron diffraction observation. The control of Ga-adatom migration and the adsorption of 1/3 and 1 monolayer (ML) of Ga-adatom govern the surface morphology of the GaN layers. The bulk surfaces of (1 × 1) and (2 × 1) introduces incoherent nuclei, resulting in a delay of GaN coalescence, exhibits rough growth front and poor surface morphology.

Original languageEnglish
JournalSurface Science
Volume527
Issue number1-3
DOIs
Publication statusPublished - Mar 10 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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