Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Robert F. Davis, K. S. Ailey, R. S. Kern, D. J. Kester, Z. Sitar, L. Smith, Tanaka Satoru, C. Wang

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.

Original languageEnglish
Pages (from-to)351-362
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Volume339
Publication statusPublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Fingerprint

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
nitrides
molecular beam epitaxy
Thin films
thin films
Aluminum Oxide
Substrates
Compressive stress
Sapphire
Evaporation
Nucleation
X ray photoelectron spectroscopy
Metals
Spectroscopy
Transmission electron microscopy
bunching

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., ... Wang, C. (1994). Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy. Materials Research Society Symposium - Proceedings, 339, 351-362.

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy. / Davis, Robert F.; Ailey, K. S.; Kern, R. S.; Kester, D. J.; Sitar, Z.; Smith, L.; Satoru, Tanaka; Wang, C.

In: Materials Research Society Symposium - Proceedings, Vol. 339, 01.12.1994, p. 351-362.

Research output: Contribution to journalConference article

Davis, Robert F. ; Ailey, K. S. ; Kern, R. S. ; Kester, D. J. ; Sitar, Z. ; Smith, L. ; Satoru, Tanaka ; Wang, C. / Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy. In: Materials Research Society Symposium - Proceedings. 1994 ; Vol. 339. pp. 351-362.
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AU - Satoru, Tanaka

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N2 - The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.

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