Abstract
The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.
| Original language | English |
|---|---|
| Pages (from-to) | 351-362 |
| Number of pages | 12 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 339 |
| Publication status | Published - Dec 1 1994 |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy. / Davis, Robert F.; Ailey, K. S.; Kern, R. S.; Kester, D. J.; Sitar, Z.; Smith, L.; Satoru, Tanaka; Wang, C.
In: Materials Research Society Symposium - Proceedings, Vol. 339, 01.12.1994, p. 351-362.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy
AU - Davis, Robert F.
AU - Ailey, K. S.
AU - Kern, R. S.
AU - Kester, D. J.
AU - Sitar, Z.
AU - Smith, L.
AU - Satoru, Tanaka
AU - Wang, C.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.
AB - The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.
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M3 - Conference article
VL - 339
SP - 351
EP - 362
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -