Initial stages of platinum silicide formation on Si(110) studied by scanning tunneling microscopy

Anton Visikovskiy; Masamichi Yoshimura; Kazuyuki Ueda

doi:10.1143/JJAP.48.08JB11

Initial stages of platinum silicide formation on Si(110) studied by scanning tunneling microscopy

Anton Visikovskiy, Masamichi Yoshimura, Kazuyuki Ueda

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2 Citations (Scopus)

Abstract

Initial stages of formation of platinum (Pt) silicide have been studied by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). Stranski-Krastanov growth mode has been observed for the Pt silicide. Layer-by-layer growth occurs at submonolayer coverages resulting in four different surface structures. At coverages more than one monolayer (ML) Pt silicide islands start to nucleate. The morphology of the silicide is represented by separated islands or very long nanowires depending on preparation technique. The islands are supposed to grow endotaxially with a large top facet corresponding to PtSi(101) surface.

Original language	English
Article number	08JB11
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	8 PART 3
DOIs	https://doi.org/10.1143/JJAP.48.08JB11
Publication status	Published - Aug 1 2009
Externally published	Yes

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Visikovskiy, A., Yoshimura, M., & Ueda, K. (2009). Initial stages of platinum silicide formation on Si(110) studied by scanning tunneling microscopy. Japanese Journal of Applied Physics, 48(8 PART 3), [08JB11]. https://doi.org/10.1143/JJAP.48.08JB11

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Access to Document

10.1143/JJAP.48.08JB11