TY - JOUR
T1 - Initial stages of platinum silicide formation on Si(110) studied by scanning tunneling microscopy
AU - Visikovskiy, Anton
AU - Yoshimura, Masamichi
AU - Ueda, Kazuyuki
PY - 2009/8/1
Y1 - 2009/8/1
N2 - Initial stages of formation of platinum (Pt) silicide have been studied by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). Stranski-Krastanov growth mode has been observed for the Pt silicide. Layer-by-layer growth occurs at submonolayer coverages resulting in four different surface structures. At coverages more than one monolayer (ML) Pt silicide islands start to nucleate. The morphology of the silicide is represented by separated islands or very long nanowires depending on preparation technique. The islands are supposed to grow endotaxially with a large top facet corresponding to PtSi(101) surface.
AB - Initial stages of formation of platinum (Pt) silicide have been studied by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). Stranski-Krastanov growth mode has been observed for the Pt silicide. Layer-by-layer growth occurs at submonolayer coverages resulting in four different surface structures. At coverages more than one monolayer (ML) Pt silicide islands start to nucleate. The morphology of the silicide is represented by separated islands or very long nanowires depending on preparation technique. The islands are supposed to grow endotaxially with a large top facet corresponding to PtSi(101) surface.
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U2 - 10.1143/JJAP.48.08JB11
DO - 10.1143/JJAP.48.08JB11
M3 - Article
AN - SCOPUS:77952330379
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 PART 3
M1 - 08JB11
ER -