Initiating stripe domains in bloch line memory

T. Suzuki, K. Matsuyama, H. Asada, S. Konishi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.

Original languageEnglish
Pages (from-to)3393-3395
Number of pages3
JournalIEEE Transactions on Magnetics
Volume23
Issue number5
DOIs
Publication statusPublished - Sep 1987

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Garnets
Data storage equipment
Domain walls
Phosphoric acid
Stretching
phosphoric acid

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Initiating stripe domains in bloch line memory. / Suzuki, T.; Matsuyama, K.; Asada, H.; Konishi, S.

In: IEEE Transactions on Magnetics, Vol. 23, No. 5, 09.1987, p. 3393-3395.

Research output: Contribution to journalArticle

Suzuki, T. ; Matsuyama, K. ; Asada, H. ; Konishi, S. / Initiating stripe domains in bloch line memory. In: IEEE Transactions on Magnetics. 1987 ; Vol. 23, No. 5. pp. 3393-3395.
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