Abstract
In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.
Original language | English |
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Pages (from-to) | 3393-3395 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 23 |
Issue number | 5 |
DOIs | |
Publication status | Published - Sep 1987 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering