Abstract
In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.
| Original language | English |
|---|---|
| Pages (from-to) | 3393-3395 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 23 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Sep 1987 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Initiating stripe domains in bloch line memory. / Suzuki, T.; Matsuyama, K.; Asada, H.; Konishi, S.
In: IEEE Transactions on Magnetics, Vol. 23, No. 5, 09.1987, p. 3393-3395.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Initiating stripe domains in bloch line memory
AU - Suzuki, T.
AU - Matsuyama, K.
AU - Asada, H.
AU - Konishi, S.
PY - 1987/9
Y1 - 1987/9
N2 - In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.
AB - In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.
UR - http://www.scopus.com/inward/record.url?scp=0023417117&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023417117&partnerID=8YFLogxK
U2 - 10.1109/TMAG.1987.1065554
DO - 10.1109/TMAG.1987.1065554
M3 - Article
AN - SCOPUS:0023417117
VL - 23
SP - 3393
EP - 3395
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5
ER -