Injection of current densities over kA/cm2 in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm2 and kA/cm2

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Abstract

We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.

Original languageEnglish
Article number63331O
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume6333
DOIs
Publication statusPublished - Dec 1 2006
EventOrganic Ligh Emitting Materials and Devices X - San Diego, CA, United States
Duration: Aug 13 2006Aug 16 2006

Fingerprint

Carrier transport
Charge carriers
Electric space charge
Trap
Thin Films
charge carriers
Injection
Current density
Charge
injection
current density
Thin films
traps
thin films
Thin film devices
space charge
Electric current measurement
Phthalocyanine
Copper
Free Space

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Injection of current densities over kA/cm2 in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm2 and kA/cm2",
abstract = "We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.",
author = "Toshinori Matsushima and Chihaya Adachi",
year = "2006",
month = "12",
day = "1",
doi = "10.1117/12.682122",
language = "English",
volume = "6333",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
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publisher = "SPIE",

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TY - JOUR

T1 - Injection of current densities over kA/cm2 in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm2 and kA/cm2

AU - Matsushima, Toshinori

AU - Adachi, Chihaya

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.

AB - We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.

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