Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE

K. Hamamoto; T. Sasaki; T. Matsumoto; K. Komatsu

doi:10.1049/el:19961499

Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE

K. Hamamoto, T. Sasaki, T. Matsumoto, K. Komatsu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A 1 × 4 optical switch consisting of a passive 1 × 4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58mA without any additional SOA.

Original language	English
Pages (from-to)	2265-2266
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	24
DOIs	https://doi.org/10.1049/el:19961499
Publication status	Published - 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19961499

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title = "Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE",

abstract = "A 1 × 4 optical switch consisting of a passive 1 × 4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58mA without any additional SOA.",

author = "K. Hamamoto and T. Sasaki and T. Matsumoto and K. Komatsu",

year = "1996",

doi = "10.1049/el:19961499",

language = "English",

volume = "32",

pages = "2265--2266",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE

AU - Hamamoto, K.

AU - Sasaki, T.

AU - Matsumoto, T.

AU - Komatsu, K.

PY - 1996

Y1 - 1996

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AB - A 1 × 4 optical switch consisting of a passive 1 × 4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58mA without any additional SOA.

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JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE

Abstract

All Science Journal Classification (ASJC) codes

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