A 1 × 4 optical switch consisting of a passive 1 × 4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58mA without any additional SOA.
|Number of pages||2|
|Publication status||Published - 1996|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering