An insertion-loss-free 2×2 passive splitter/laser diode (LD) amplifier gate sw'itch was fabricated using bandgap energy controlled selective metalorganic vapour phase epitaxy (MOVPE). The InGaAsP bulk core layers of the passive waveguides and LD amplifiers, for which the bandgap energies were different, were simultaneously grown using one-step selective MOVPE. More than OdB of fibre-to-fibre gain was achieved at a gate injection current of >75mA.
|Number of pages||3|
|Publication status||Published - Sept 28 1995|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering