Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE

K. Hamamoto, K. Komatsu

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Abstract

An insertion-loss-free 2×2 passive splitter/laser diode (LD) amplifier gate sw'itch was fabricated using bandgap energy controlled selective metalorganic vapour phase epitaxy (MOVPE). The InGaAsP bulk core layers of the passive waveguides and LD amplifiers, for which the bandgap energies were different, were simultaneously grown using one-step selective MOVPE. More than OdB of fibre-to-fibre gain was achieved at a gate injection current of >75mA.

Original languageEnglish
Pages (from-to)1779-1781
Number of pages3
JournalElectronics Letters
Volume31
Issue number20
DOIs
Publication statusPublished - Sep 28 1995
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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