Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °c

Juan Paolo S. Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The emphasis on ubiquitous technology means that future technological applications will depend heavily on transparent conducting materials. To facilitate truly ubiquitous applications, transparent conductors should be fabricated at low temperatures (<50 °C). Here, we demonstrate an instantaneous (<100 ns) and low-temperature (<45 °C at the substrate) method, excimer laser irradiation, for the transformation of an a-InGaZnO semiconductor into a transparent highly conductive oxide with performance rivaling traditional and emerging transparent conductors. Our analysis shows that the instantaneous and substantial conductivity enhancement is due to the generation of a large amount of oxygen vacancies in a-InGaZnO after irradiation. The method's combination of low temperature, extremely rapid process, and applicability to other materials will create a new class of transparent conductors for the high-throughput roll-to-roll fabrication of future flexible devices.

Original languageEnglish
Pages (from-to)24590-24597
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number29
DOIs
Publication statusPublished - Jul 25 2018

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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