Abstract
A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.
Original language | English |
---|---|
Pages (from-to) | 5932-5938 |
Number of pages | 7 |
Journal | Small |
Volume | 11 |
Issue number | 44 |
DOIs | |
Publication status | Published - Nov 25 2015 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Biotechnology
- Biomaterials
- Chemistry(all)
- Materials Science(all)