Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang, Songlin Li, Xuming Zou, Johnny Ho, Lei Liao, Xiangheng Xiao, Changzhong Jiang, Weida Hu, Jianlu Wang, Jinchai Li

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

Original languageEnglish
Pages (from-to)5932-5938
Number of pages7
JournalSmall
Volume11
Issue number44
DOIs
Publication statusPublished - Nov 25 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Fingerprint

Dive into the research topics of 'Integration of High-k Oxide on MoS<sub>2</sub> by Using Ozone Pretreatment for High-Performance MoS<sub>2</sub> Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation'. Together they form a unique fingerprint.

Cite this