Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang; Songlin Li; Xuming Zou; Johnny Ho; Lei Liao; Xiangheng Xiao; Changzhong Jiang; Weida Hu; Jianlu Wang; Jinchai Li

doi:10.1002/smll.201501260

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang, Songlin Li, Xuming Zou, Johnny Ho, Lei Liao, Xiangheng Xiao, Changzhong Jiang, Weida Hu, Jianlu Wang, Jinchai Li

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A top-gated MoS₂ transistor with 6 nm thick HfO₂ is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO₂ is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO₂, and multilayered samples are less susceptible than monolayer ones.

Original language	English
Pages (from-to)	5932-5938
Number of pages	7
Journal	Small
Volume	11
Issue number	44
DOIs	https://doi.org/10.1002/smll.201501260
Publication status	Published - Nov 25 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biotechnology
Biomaterials
Chemistry(all)
Materials Science(all)

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10.1002/smll.201501260

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Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. / Wang, Jingli; Li, Songlin; Zou, Xuming; Ho, Johnny; Liao, Lei; Xiao, Xiangheng; Jiang, Changzhong; Hu, Weida; Wang, Jianlu; Li, Jinchai.

In: Small, Vol. 11, No. 44, 25.11.2015, p. 5932-5938.

Research output: Contribution to journal › Article › peer-review

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abstract = "A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.",

author = "Jingli Wang and Songlin Li and Xuming Zou and Johnny Ho and Lei Liao and Xiangheng Xiao and Changzhong Jiang and Weida Hu and Jianlu Wang and Jinchai Li",

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AU - Zou, Xuming

AU - Ho, Johnny

AU - Liao, Lei

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Hu, Weida

AU - Wang, Jianlu

AU - Li, Jinchai

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N2 - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

AB - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

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Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Abstract

All Science Journal Classification (ASJC) codes

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