Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang; Songlin Li; Xuming Zou; Johnny Ho; Lei Liao; Xiangheng Xiao; Changzhong Jiang; Weida Hu; Jianlu Wang; Jinchai Li

doi:10.1002/smll.201501260

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang, Songlin Li, Xuming Zou, Johnny Ho, Lei Liao, Xiangheng Xiao, Changzhong Jiang, Weida Hu, Jianlu Wang, Jinchai Li

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

A top-gated MoS₂ transistor with 6 nm thick HfO₂ is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO₂ is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO₂, and multilayered samples are less susceptible than monolayer ones.

Original language	English
Pages (from-to)	5932-5938
Number of pages	7
Journal	Small
Volume	11
Issue number	44
DOIs	https://doi.org/10.1002/smll.201501260
Publication status	Published - Nov 25 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biotechnology
Biomaterials
Chemistry(all)
Materials Science(all)

Access to Document

10.1002/smll.201501260

Cite this

@article{c428e9b235cd4eb09650ee2e663115eb,

title = "Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation",

abstract = "A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.",

author = "Jingli Wang and Songlin Li and Xuming Zou and Johnny Ho and Lei Liao and Xiangheng Xiao and Changzhong Jiang and Weida Hu and Jianlu Wang and Jinchai Li",

year = "2015",

month = nov,

day = "25",

doi = "10.1002/smll.201501260",

language = "English",

volume = "11",

pages = "5932--5938",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag",

number = "44",

}

TY - JOUR

T1 - Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

AU - Wang, Jingli

AU - Li, Songlin

AU - Zou, Xuming

AU - Ho, Johnny

AU - Liao, Lei

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Hu, Weida

AU - Wang, Jianlu

AU - Li, Jinchai

PY - 2015/11/25

Y1 - 2015/11/25

N2 - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

AB - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

UR - http://www.scopus.com/inward/record.url?scp=84954517763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954517763&partnerID=8YFLogxK

U2 - 10.1002/smll.201501260

DO - 10.1002/smll.201501260

M3 - Article

AN - SCOPUS:84954517763

VL - 11

SP - 5932

EP - 5938

JO - Small

JF - Small

SN - 1613-6810

IS - 44

ER -

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this