A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.
|Number of pages||2|
|Publication status||Published - Dec 1 1990|
|Event||Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn|
Duration: Apr 4 1990 → Apr 6 1990
|Other||Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90|
|Period||4/4/90 → 4/6/90|
All Science Journal Classification (ASJC) codes