Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study

Norie Matsubara; Tomohiko Ogata; Takanori Mitani; Shinji Munetoh; Teruaki Motooka

Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study

Norie Matsubara, Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
Pages	173-178
Number of pages	6
Publication status	Published - Dec 1 2009
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 2 2008 → Dec 4 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1150
ISSN (Print)	0272-9172

Other

Other	2008 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	12/2/08 → 12/4/08

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Matsubara, N., Ogata, T., Mitani, T., Munetoh, S., & Motooka, T. (2009). Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study. In Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films (pp. 173-178). (Materials Research Society Symposium Proceedings; Vol. 1150).

Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass : Molecular dynamics study. / Matsubara, Norie; Ogata, Tomohiko; Mitani, Takanori et al.

Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. 2009. p. 173-178 (Materials Research Society Symposium Proceedings; Vol. 1150).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsubara, N, Ogata, T, Mitani, T, Munetoh, S & Motooka, T 2009, Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study. in Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Materials Research Society Symposium Proceedings, vol. 1150, pp. 173-178, 2008 MRS Fall Meeting, Boston, MA, United States, 12/2/08.

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title = "Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study",

abstract = "We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.",

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N2 - We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.

AB - We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.

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Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study

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