Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study

Norie Matsubara, Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the dependence of the melting and crystal growth rates on the crystal orientations at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates in all crystal orientations, though the growth rate at Si(001)/l-Si was the largest in all crystal orientations. We have also performed MD simulations of intensity-modulated excimer laser annealing (IMELA) of Si thin films. These results suggest that (001) surface-oriented Si can be obtained by IMELA owing to the largest growth rate at Si(001)/l-Si of all in the repetitions of crystallization and melting.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
Pages173-178
Number of pages6
Publication statusPublished - Dec 1 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 2 2008Dec 4 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1150
ISSN (Print)0272-9172

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/2/0812/4/08

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Matsubara, N., Ogata, T., Mitani, T., Munetoh, S., & Motooka, T. (2009). Intensity-modulated excimer laser annealing to obtain (001) surface-oriented poly-si films on glass: Molecular dynamics study. In Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films (pp. 173-178). (Materials Research Society Symposium Proceedings; Vol. 1150).