TY - JOUR
T1 - Interface Effects on the Ionic Conductivity of Doped Ceria-Yttria-Stabilized Zirconia Heterostructures
AU - Pergolesi, Daniele
AU - Gilardi, Elisa
AU - Fabbri, Emiliana
AU - Roddatis, Vladimir
AU - Harrington, George F.
AU - Lippert, Thomas
AU - Kilner, John A.
AU - Traversa, Enrico
N1 - Funding Information:
*E-mail: daniele.pergolesi@psi.ch. ORCID Daniele Pergolesi: 0000-0002-6231-0237 Elisa Gilardi: 0000-0002-8831-0104 Emiliana Fabbri: 0000-0002-8627-6926 Funding This research was supported by the NCCR MARVEL, funded by the Swiss National Science Foundation. This research is also supported by the SFB 1073 via Z02 project. Notes The authors declare no competing financial interest.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/4/25
Y1 - 2018/4/25
N2 - Multilayered heterostructures of Ce0.85Sm0.15O2-δ and Y0.16Zr0.92O2-δ of a high crystallographic quality were fabricated on (001)-oriented MgO single crystal substrates. Keeping the total thickness of the heterostructures constant, the number of ceria-zirconia bilayers was increased while reducing the thickness of each layer. At each interface Ce was found primarily in the reduced, 3+ oxidation state in a layer extending about 2 nm from the interface. Concurrently, the conductivity decreased as the thickness of the layers was reduced, suggesting a progressive confinement of the charge transport along the YSZ layers. The comparative analysis of the in-plane electrical characterization suggests that the contribution to the total electrical conductivity of these interfacial regions is negligible. For the smallest layer thickness of 2 nm the doped ceria layers are electrically insulating and the ionic transport only occurs through the zirconia layers. This is explained in terms of a reduced mobility of the oxygen vacancies in the highly reduced ceria.
AB - Multilayered heterostructures of Ce0.85Sm0.15O2-δ and Y0.16Zr0.92O2-δ of a high crystallographic quality were fabricated on (001)-oriented MgO single crystal substrates. Keeping the total thickness of the heterostructures constant, the number of ceria-zirconia bilayers was increased while reducing the thickness of each layer. At each interface Ce was found primarily in the reduced, 3+ oxidation state in a layer extending about 2 nm from the interface. Concurrently, the conductivity decreased as the thickness of the layers was reduced, suggesting a progressive confinement of the charge transport along the YSZ layers. The comparative analysis of the in-plane electrical characterization suggests that the contribution to the total electrical conductivity of these interfacial regions is negligible. For the smallest layer thickness of 2 nm the doped ceria layers are electrically insulating and the ionic transport only occurs through the zirconia layers. This is explained in terms of a reduced mobility of the oxygen vacancies in the highly reduced ceria.
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U2 - 10.1021/acsami.8b01903
DO - 10.1021/acsami.8b01903
M3 - Article
C2 - 29617562
AN - SCOPUS:85045884421
SN - 1944-8244
VL - 10
SP - 14160
EP - 14169
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 16
ER -