@article{e38e627a2ce248c5a079df73e4804d54,
title = "Interface engineering for high-performance top-gated mos2 field-effect transistors",
author = "Xuming Zou and Jingli Wang and Chiu, {Chung Hua} and Yun Wu and Xiangheng Xiao and Changzhong Jiang and Wu, {Wen Wei} and Liqiang Mai and Tangsheng Chen and Jinchai Li and Ho, {Johnny C.} and Lei Liao",
note = "Funding Information: Supporting Information is available from the Wiley Online Library or from the author. The authors acknowledge the 973 grant of MOST (Nos. 2013CBA01604 and 2011CB932700), M1OE (20120141110054), NSFC grant (Nos. 111042207, 61222402, and 61376085), the grant (SYSJJ2013?05) of State Key Laboratory of Silicate Materials for Architectures in Wuhan University of Technology, Fundamental Research Funds for the Central Universities (No. 2014202020201), as well as the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project Nos. CityU 101210 and CityU 101111. Funding Information: The authors acknowledge the 973 grant of MOST (Nos. 2013CBA01604 and 2011CB932700), MOE (20120141110054), NSFC grant (Nos. 11104207, 61222402, and 61376085), the grant (SYSJJ2013–05) of State Key Laboratory of Silicate Materials for Architectures in Wuhan University of Technology, Fundamental Research Funds for the Central Universities (No. 2014202020201), as well as the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project Nos. CityU 101210 and CityU 101111.",
year = "2014",
month = sep,
doi = "10.1002/adma.201402008",
language = "English",
volume = "26",
pages = "6255--6261",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "36",
}