Interface-structure analysis of amorphous semiconductor heterojunctions by in situ x-ray photoelectron spectroscopy

M. Kawasaki, Y. Matsuzaki, H. Koinuma

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The heterojunction interface of an amorphous semiconductor bilayer composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated and fluorinated amorphous silicon carbide (a-SiC:H,F) was analyzed with an atomic-scale resolution with use of in situ x-ray photoelectron spectroscopy. The intensity of photoelectron emission originating from carbon and fluorine in the a-SiC:H,F and transmitting through an a-Si:H overlayer was measured as a function of the a-Si:H layer thickness. The bilayers were fabricated by two different methods: a batch (i.e., gas-exchange) method and a continuous (i.e., excitation-energy- exchange) method. The interface fabricated by the batch process is ideally sharp, whereas that fabricated by the continuous method has a compositional transition region about 0.5 nm thick. Details of the deposition process are examined in order to explain this discrepancy.

Original languageEnglish
Pages (from-to)13316-13322
Number of pages7
JournalPhysical Review B
Volume39
Issue number18
DOIs
Publication statusPublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Interface-structure analysis of amorphous semiconductor heterojunctions by in situ x-ray photoelectron spectroscopy'. Together they form a unique fingerprint.

Cite this