Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane

H. Abe, M. Naito, W. J. Moon, Kenji Kaneko, A. Saito, Z. Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The influences of the substrates planes on the interface structures between AlN and MgB2 layers were investigated. These layers were deposited on sapphire substrate with different orientations by a conventional method. Selected-area electron diffraction patterns and high-resolution TEM were applied on the cross-sectional thinned specimens.

Original languageEnglish
Pages (from-to)2343-2346
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number4
DOIs
Publication statusPublished - Aug 15 2004

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sapphire
thin films
diffraction patterns
electron diffraction
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane. / Abe, H.; Naito, M.; Moon, W. J.; Kaneko, Kenji; Saito, A.; Wang, Z.

In: Journal of Applied Physics, Vol. 96, No. 4, 15.08.2004, p. 2343-2346.

Research output: Contribution to journalArticle

Abe, H. ; Naito, M. ; Moon, W. J. ; Kaneko, Kenji ; Saito, A. ; Wang, Z. / Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 4. pp. 2343-2346.
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