Interfacial charge transfer and charge generation in organic electronic devices

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We have recently proposed that improvement of device performance using a buffer layer of molybdenum trioxide (MoO3) originates from interfacial charge generation at an interface of MoO3 and an organic hole-transport layer [17]. However, there is no clear experimental evidence enough to support the charge generation in our recent report. In this study, from comparison of current density-voltage characteristics of organic hole-only devices and ultraviolet/visible/near-infrared absorption spectra of composite films, we can conclude that the interfacial charge generation surly occurs to realize space-charge-limited currents of a wide variety of organic hole-transport layers. Moreover, a drastic increase in current density of a bilayer device of n-type C60 and p-type N,N′-diphenyl-N,N′-bis(1- naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) by using a MoO3 layer can provide the evidence of the charge generation.

Original languageEnglish
Pages (from-to)520-528
Number of pages9
JournalOrganic Electronics
Volume12
Issue number3
DOIs
Publication statusPublished - Jan 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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