An interface in metal/oxide nanowire junctions plays a crucial role on the electronic device applications, especially two-terminal devices. Here we demonstrate the crucial role of interfacial effects on oxide (SnO 2-δ) nanowire/Pt junctions. The resistivity estimated from the I-V data of the junctions was four orders of magnitudes higher than that measured by a noncontact microwave conductivity method. We found that such apparent discrepancy is due to the presence of insulating oxidized interfacial layer. Since most conductive oxides are typically n -type semiconductors via oxygen vacancies, above implications will be rather universal and crucial for reproducible emerging nanodevices using oxide nanowires.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)