Abstract
The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si1-xGex (x: 0-1) films on an insulator at a low temperature (<500 °C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain (×100 μm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 °C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions (x: 0-1) by controlling the air exposure time. A qualitative model is presented.
| Original language | English |
|---|---|
| Article number | 03B002 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 3 PART 3 |
| DOIs | |
| Publication status | Published - Mar 2009 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Interfacial-oxide layer controlled Al-induced crystallization of Si 1-xGex (x : 0-1) on insulating substrate. / Kurosawa, Masashi; Tsumura, Yoshitaka; Sadoh, Taizoh; Miyao, Masanobu.
In: Japanese Journal of Applied Physics, Vol. 48, No. 3 PART 3, 03B002, 03.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interfacial-oxide layer controlled Al-induced crystallization of Si 1-xGex (x
T2 - 0-1) on insulating substrate
AU - Kurosawa, Masashi
AU - Tsumura, Yoshitaka
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2009/3
Y1 - 2009/3
N2 - The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si1-xGex (x: 0-1) films on an insulator at a low temperature (<500 °C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain (×100 μm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 °C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions (x: 0-1) by controlling the air exposure time. A qualitative model is presented.
AB - The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si1-xGex (x: 0-1) films on an insulator at a low temperature (<500 °C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain (×100 μm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 °C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions (x: 0-1) by controlling the air exposure time. A qualitative model is presented.
UR - http://www.scopus.com/inward/record.url?scp=77952502968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952502968&partnerID=8YFLogxK
U2 - 10.1143/JJAP.48.03B002
DO - 10.1143/JJAP.48.03B002
M3 - Article
AN - SCOPUS:77952502968
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 PART 3
M1 - 03B002
ER -