Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Masashi Kurosawa; Yoshitaka Tsumura; Taizoh Sadoh

Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	03B002-1〜5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	48
Issue number	3
Publication status	Published - Mar 2009

Access to Document

http://id.ndl.go.jp/bib/10191519

Cite this

Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x : 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials). / Kurosawa, Masashi; Tsumura, Yoshitaka; Sadoh, Taizoh.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 48, No. 3, 03.2009, p. 03B002-1〜5.

Research output: Contribution to journal › Article › peer-review

Kurosawa, M, Tsumura, Y & Sadoh, T 2009, 'Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)', Japanese Journal of Applied Physics, Part 2: Letters, vol. 48, no. 3, pp. 03B002-1〜5. <http://id.ndl.go.jp/bib/10191519>

@article{af1df9868f984e4b8809afc525f6e676,

title = "Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)",

author = "Masashi Kurosawa and Yoshitaka Tsumura and Taizoh Sadoh",

year = "2009",

month = mar,

language = "English",

volume = "48",

pages = "03B002--1〜5",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x

T2 - 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

AU - Kurosawa, Masashi

AU - Tsumura, Yoshitaka

AU - Sadoh, Taizoh

PY - 2009/3

Y1 - 2009/3

M3 - Article

VL - 48

SP - 03B002-1〜5

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 3

ER -