Original language | English |
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Pages (from-to) | 03B002-1〜5 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 48 |
Issue number | 3 |
Publication status | Published - Mar 2009 |
Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh
Research output: Contribution to journal › Article › peer-review