Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)03B002-1〜5
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume48
Issue number3
Publication statusPublished - Mar 2009

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