Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Masashi Kurosawa; Yoshitaka Tsumura; Taizoh Sadoh

Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh

Electronic Devices

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	03B002-1〜5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	48
Issue number	3
Publication status	Published - Mar 2009

Access to Document

http://id.ndl.go.jp/bib/10191519

Cite this

Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x : 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials). / Kurosawa, Masashi; Tsumura, Yoshitaka; Sadoh, Taizoh.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 48, No. 3, 03.2009, p. 03B002-1〜5.

Research output: Contribution to journal › Article

Kurosawa, M, Tsumura, Y & Sadoh, T 2009, 'Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x: 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)', Japanese Journal of Applied Physics, Part 2: Letters, vol. 48, no. 3, pp. 03B002-1〜5. <http://id.ndl.go.jp/bib/10191519>

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