Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x: 0–1) on Insulating Substrate

Translated title of the contribution: 2009-03-23

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Translated title of the contribution	2009-03-23
Original language	Undefined/Unknown
Pages (from-to)	03B002-03B002
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	48
Issue number	3
Publication status	Published - Mar 23 2009

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@article{60da8111e8de4138a71fb2515140ee20,

title = "Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x: 0–1) on Insulating Substrate",

author = "Masashi Kurosawa and Yoshitaka Tsumura and Taizoh Sadoh and Masanobu Miyao",

year = "2009",

month = mar,

day = "23",

language = "未定義/不明",

volume = "48",

pages = "03B002--03B002",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x

T2 - 0–1) on Insulating Substrate

AU - Kurosawa, Masashi

AU - Tsumura, Yoshitaka

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2009/3/23

Y1 - 2009/3/23

M3 - 学術誌

VL - 48

SP - 03B002-03B002

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 3

ER -