Interfacial structure of Fe3Si/FeSi2 layered films deposited on si(111) at elevated substrate-temperatures

Kaoru Takeda, Tsuyoshi Yoshitake, Yoshiki Sakamoto, Daisuke Hara, Masaru Itakura, Noriyuki Kuwano, Kunihito Nagayama

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Abstract

Influence of substrate-temperature on the interfacial structure of Fe 3Si/FeSi2 layered films deposited on a Si(111) substrate were studied. Fe3Si/FeSi2 films with sharp interfaces were grown at room substrate-temperature. At a substrate-temperature of 300 °C, interfaces between the Fe3Si and FeSi2 layers were obviously unsharpened, while the crystallinity of Fe3Si was enhanced. The compositional periodic structure was barely unsharpened and it was nearly the same as that of the films deposited at room substrate-temperature. Epitaxial growth of Fe3Si layers across FeSi2 layers was carried out. This substrate-temperature is the upper limit at which the heterostructure formation takes place. At 400 °C, ε-FeSi was formed due to activated interdiffusion, and the structure of Fe3Si changed partially from B2-type to DO3-type.

Original languageEnglish
Pages (from-to)3543-3549
Number of pages7
JournalInternational Journal of Modern Physics B
Volume23
Issue number17
DOIs
Publication statusPublished - Jul 10 2009

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All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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