Abstract
Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La 0.7Sr 0.3MnO 3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La 0.7Sr 0.3MnO 3 to be 1.9×10 -15Ω•m2.
| Original language | English |
|---|---|
| Article number | 184404 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 86 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - Nov 5 2012 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Intrinsic domain-wall resistivity in half-metallic manganite thin films. / Bakaul, S. R.; Hu, W.; Wu, T.; Kimura, T.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 18, 184404, 05.11.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Intrinsic domain-wall resistivity in half-metallic manganite thin films
AU - Bakaul, S. R.
AU - Hu, W.
AU - Wu, T.
AU - Kimura, T.
PY - 2012/11/5
Y1 - 2012/11/5
N2 - Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La 0.7Sr 0.3MnO 3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La 0.7Sr 0.3MnO 3 to be 1.9×10 -15Ω•m2.
AB - Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La 0.7Sr 0.3MnO 3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La 0.7Sr 0.3MnO 3 to be 1.9×10 -15Ω•m2.
UR - http://www.scopus.com/inward/record.url?scp=84869068942&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869068942&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.86.184404
DO - 10.1103/PhysRevB.86.184404
M3 - Article
AN - SCOPUS:84869068942
VL - 86
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 18
M1 - 184404
ER -